NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS

被引：80

作者：

BAECHTOLD, W

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 05期

关键词：

D O I：

10.1109/T-ED.1972.17473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：674 / +

页数：1

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