STUDY OF ELECTRICAL AND CHEMICAL PROFILES OF SI IMPLANTED IN SEMI-INSULATING GAAS SUBSTRATE ANNEALED UNDER SIO2 AND CAPLESS

被引：18

作者：

FENG, M

KWOK, SP

EU, V

HENDERSON, BW

机构：

来源：

关键词：

D O I：

10.1063/1.329042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2990 / 2993

页数：4

共 16 条

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HENDERSON, WB
KIM, HB
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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 473 - 475
[3] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS
EVANS, CA
DELINE, VR
SIGMON, TW
LIDOW, A
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 291 - 293
[4] GIBBONS JF, 1975, PROJECTED RANGE STAT
[5] HALLAIS J, 1976, GALLIUM ARSENIDE REL, P220
[6] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700
[7] REDISTRIBUTION OF CR IN CAPLESS-ANNEALED GAAS UNDER ARSENIC PRESSURE
KASAHARA, J
WATANABE, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : L151 - L154
[8] SUPPRESSION OF THERMAL-CONVERSION IN CR-DOPED SEMI-INSULATING GAAS
KASAHARA, J
ARAI, M
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8229 - 8231
[9] KIM HB, 1979, 7TH P BIENN CORN EL, P121
[10] SURFACE IMPURITY GRADIENTS IN EPITAXIAL GAAS
NICHOLS, KH
GOLDWASSER, RE
WOLFE, CM
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 601 - 603