STUDY OF ELECTRICAL AND CHEMICAL PROFILES OF SI IMPLANTED IN SEMI-INSULATING GAAS SUBSTRATE ANNEALED UNDER SIO2 AND CAPLESS

被引:18
作者
FENG, M
KWOK, SP
EU, V
HENDERSON, BW
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D O I
10.1063/1.329042
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O59 [应用物理学];
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页码:2990 / 2993
页数:4
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