DISTRIBUTION OF IMPURITIES IN SEMI-INSULATING GAAS AFTER HEAT-TREATMENT IN HYDROGEN

被引：25

作者：

CLEGG, JB ^{[1
]}

SCOTT, GB ^{[1
]}

HALLAIS, J ^{[1
]}

MIRCEAROUSSEL, A ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

关键词：

D O I：

10.1063/1.328837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1110 / 1112

页数：3

共 17 条

[1] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE
BROZEL, MR
CLEGG, JB
NEWMAN, RC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) : 1331 - 1339
[2] Driscoll C.M.H., 1975, IOP C P GALL ARS REL, V24, P275
[3] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS
EVANS, CA
DELINE, VR
SIGMON, TW
LIDOW, A
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 291 - 293
[4] HALLAIS J, 1976, I PHYS C SER B, V33, P220
[5] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700
[6] HUBER AM, UNPUBLISHED
[7] REDISTRIBUTION OF CR IN CAPLESS-ANNEALED GAAS UNDER ARSENIC PRESSURE
KASAHARA, J
WATANABE, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : L151 - L154
[8] KIM HB, 1976, I PHYS C SER B, V33, P136
[9] THERMAL-CONVERSION OF GAAS
KLEIN, PB
NORDQUIST, PER
SIEBENMANN, PG
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4861 - 4869
[10] EDGE EMISSION INVOLVING MANGANESE IMPURITIES IN GAAS AT 4.2-DEGREES-K
LEE, TC
ANDERSON, WW
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (09) : 265 - 268