RESIDUAL-STRESS IN SILICON-NITRIDE FILMS

被引：91

作者：

IRENE, EA ^{[1
]}

机构：

[1] IBM CORP THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 03期

关键词：

D O I：

10.1007/BF02663273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：287 / 298

页数：12

共 12 条

[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS OBTAINED BY REACTION OF SIBR4 AND NH3
ABOAF, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1736 - &
[2] ASHCROFT W, 1973, P BRIT CERAMIC SOC, V22, P169
[3] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
GLEIM, PS
YEAKLEY, RL
RUNYAN, WR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &
[4] STRESS AND RESISTIVITY CONTROL IN SPUTTERED MOLYBDENUM FILMS AND COMPARISON WITH SPUTTERED GOLD
BLACHMAN, AG
[J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 699 - &
[5] THERMAL EXPANSION OF SPUTTERED SILICON NITRIDE FILMS
BURKHARDT, PJ
MARVEL, RF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 864 - +
[6] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS
CHAUDHURI, AR
PATEL, JR
RUBIN, LG
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2736 - &
[7] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K
DASH, WC
NEWMAN, R
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155
[8] PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES
DOO, VY
KERR, DR
NICHOLS, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) : 61 - &
[9] DETERMINATION OF STRESS IN FILMS ON SINGLE CRYSTALLINE SILICON SUBSTRATES
GLANG, R
HOLMWOOD, RA
ROSENFELD, RL
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (01) : 7 - +
[10] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN
IRENE, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1613 - 1616

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