SATURATION OF SI ACTIVATION AT HIGH DOPING LEVELS IN GAAS

被引：22

作者：

BANWELL, TC ^{[1
]}

MAENPAA, M ^{[1
]}

NICOLET, MA ^{[1
]}

TANDON, JL ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1983年 / 44卷 / 06期

关键词：

D O I：

10.1016/0022-3697(83)90038-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：507 / 514

页数：8

相关论文

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