SI-DEFECT CONCENTRATIONS IN HEAVILY SI-DOPED GAAS - CHANGES INDUCED BY ANNEALING

被引：68

作者：

KUNG, JK

SPITZER, WG

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

[2] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.1663074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4477 / 4486

页数：10

相关论文

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