EPITAXIAL REGROWTH OF THIN AMORPHOUS GAAS-LAYERS

被引：22

作者：

GRIMALDI, MG

PAINE, BM

MAENPAA, M

NICOLET, MA

SADANA, DK

机构：

[1] CALTECH,PASADENA,CA 91125

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1063/1.92520

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：70 / 72

页数：3

共 8 条

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[2] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS
GAMO, K
INADA, T
MAYER, JW
EISEN, FH
RHODES, CG
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89
[3] SELENIUM IMPLANTATION IN GAAS
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WELCH, BM
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 213 - 217
[4] GRIMALDI MG, UNPUBLISHED
[5] ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAAS
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SADANA, D
BOOKER, GR
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (08) : 831 - &
[6] ION-BEAM-INDUCED ANNEALING EFFECTS IN GAAS
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AUSTIN, MW
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 307 - 312
[7] LOW-TEMPERATURE EPITAXIAL REGROWTH OF ION-IMPLANTED AMORPHOUS GAAS
WILLIAMS, JS
AUSTIN, MW
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 994 - 996
[8] WILLIAMS JS, 1980, P THIN FILM INTERFAC, V80, P187