ION-BEAM-INDUCED ANNEALING EFFECTS IN GAAS

[1] APPLICATION OF LOW-ANGLE RUTHERFORD BACKSCATTERING AND CHANNELING TECHNIQUES TO DETERMINE IMPLANTATION INDUCED DISORDER PROFILE DISTRIBUTIONS IN SEMICONDUCTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 283 - 288

[2] Brawn J. R., 1976, Applications of ion beams to materials 1975, P59

[3] Carter G., 1971, ION IMPLANTATION, P261

[4] ROLE OF ELEVATED-TEMPERATURES IN IMPLANTATION OF GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 733 - 736

[5] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89

[6] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &

[7] LAU SS, 1978, THIN FILMS INTERDIFF, pCH12

[8] Mayer J. W., 1970, ION IMPLANTATION SEM

[9] PICRAUX ST, 1973, RADIAT EFF, V17, P261

[10] WILLIAMS JMG, UNPUBLISHED

[1] APPLICATION OF LOW-ANGLE RUTHERFORD BACKSCATTERING AND CHANNELING TECHNIQUES TO DETERMINE IMPLANTATION INDUCED DISORDER PROFILE DISTRIBUTIONS IN SEMICONDUCTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 283 - 288

[2] Brawn J. R., 1976, Applications of ion beams to materials 1975, P59

[3] Carter G., 1971, ION IMPLANTATION, P261

[4] ROLE OF ELEVATED-TEMPERATURES IN IMPLANTATION OF GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 733 - 736

[5] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89

[6] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &

[7] LAU SS, 1978, THIN FILMS INTERDIFF, pCH12

[8] Mayer J. W., 1970, ION IMPLANTATION SEM

[9] PICRAUX ST, 1973, RADIAT EFF, V17, P261

[10] WILLIAMS JMG, UNPUBLISHED