ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAAS

被引：56

作者：

KULAR, SS ^{[1
]}

SEALY, BJ ^{[1
]}

STEPHENS, KG ^{[1
]}

SADANA, D ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1101(80)90099-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：831 / &

共 17 条

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[2] CARTER G, 1970, RAD EFFECTS, V6, P227
[3] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS
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INADA, T
MAYER, JW
EISEN, FH
RHODES, CG
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89
[4] ELECTRICAL-CONDUCTIVITY OF DISORDERED LAYERS IN GAAS CRYSTAL PRODUCED BY ION-IMPLANTATION
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SHIRAKI, Y
KOMATSUB.KF
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1044 - 1049
[5] COMPARISON OF ELECTRICAL PROFILES FROM HOT AND COLD IMPLANTATIONS OF ZINC IONS INTO GAAS
KULAR, SS
SEALY, BJ
STEPHENS, KG
[J]. ELECTRONICS LETTERS, 1978, 14 (01) : 22 - 23
[6] ELECTRICAL PROFILES FROM ZINC IMPLANTED GAAS
KULAR, SS
SEALY, BJ
STEPHENS, KG
[J]. ELECTRONICS LETTERS, 1978, 14 (01) : 2 - 4
[7] Littlejohn M. A., 1971, Radiation Effects, V10, P185, DOI 10.1080/00337577108230425
[8] PETTIT HR, ELECTRON MICROSCOPY, P290
[9] Sansbury J. D., 1970, Radiation Effects, V6, P269, DOI 10.1080/00337577008236306
[10] EXAMINATION OF TELLURIUM ION-IMPLANTED GAAS BY TRANSMISSION ELECTRON-MICROSCOPY
SEALY, BJ
[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (04) : 683 - 691