EXAMINATION OF TELLURIUM ION-IMPLANTED GAAS BY TRANSMISSION ELECTRON-MICROSCOPY

被引：19

作者：

SEALY, BJ ^{[1
]}

机构：

[1] UNIV SURREY,DEPT PHYS,GUILDFORD,SURREY,ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1975年 / 10卷 / 04期

关键词：

D O I：

10.1007/BF00566577

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：683 / 691

页数：9

共 30 条

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[4]

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[6]

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[7] CHANGES IN ELECTRON CONCENTRATION OF DONOR-DOPED GAAS CRYSTALS CAUSED BY ANNEALING [J].

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[10]

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