SOME 2ND-PHASE STRUCTURES IN GALLIUM-ARSENIDE ANNEALED AFTER IMPLANTATION WITH ZINC

被引：13

作者：

BENSON, RB ^{[1
]}

LITTLEJOHN, MA ^{[1
]}

PAO, PS ^{[1
]}

SARIN, HK ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,RALEIGH,NC 27607

来源：

关键词：

D O I：

10.1063/1.88369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：69 / 71

页数：3

共 13 条

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[2] Bell E. C., 1974, Radiation Effects, V22, P253, DOI 10.1080/10420157408230802
[3] BUSCHENDORF F, 1931, Z PHYS CHEM, V14, P300
[4] LATTICE PARAMETERS OF ZN3AS2
COLE, H
CHAMBERS, FW
DUNN, HM
[J]. ACTA CRYSTALLOGRAPHICA, 1956, 9 (07): : 685 - 685
[5] REINVESTIGATION OF ORDER-DISORDER IN GALLATE SPINELS
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ROY, R
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1968, 51 (05) : 297 - &
[6] EVANS R, 1952, INTRO CRYSTAL CHEMIS, P206
[7] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
GYULAI, J
MAYER, JW
MITCHELL, IV
RODRIGUEZ, V
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 332 - +
[8] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS
HARRIS, JS
MAYER, JW
EISEN, FH
HASKELL, JD
WELCH, B
PASHLEY, RD
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &
[9] HIGH-VOLTAGE ELECTRON-MICROSCOPY OF INTERFACIAL DEFECTS IN GAAS
OSIECKI, R
THOMAS, G
[J]. MATERIALS SCIENCE AND ENGINEERING, 1972, 10 (01): : 53 - &
[10] PAO PS, UNPUBLISHED