HIGH-VOLTAGE ELECTRON-MICROSCOPY OF INTERFACIAL DEFECTS IN GAAS

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &

[2] BELL WL, 1961, ELECTRON MICROSCOPY, P23

[3] INTERPRETATION OF ANOMALOUS LAYERS AT GAAS N+-N- STEP JUNCTIONS [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (16) : 1313 - &

[4] BOUCHARD M, 1971, C INTERFACES GRAIN B

[5] BOUCHARD M, 152 LAWR BERK LAB RE

[6] BULK NEGATIVE-RESISTANCE SEMICONDUCTOR DEVICES [J]. IEEE SPECTRUM, 1967, 4 (05) : 71 - &

[7] Cosslett V. E., 1970, Modern diffraction and imaging techniques in material science, P341

[8] HIRSCH PB, 1969, ELECTRON MICROSCOPY, P178

[9] HIRTH JP, 1968, THEORY DISLOCATIONS, P355

[10] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 1053 - +

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &

[2] BELL WL, 1961, ELECTRON MICROSCOPY, P23

[3] INTERPRETATION OF ANOMALOUS LAYERS AT GAAS N+-N- STEP JUNCTIONS [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (16) : 1313 - &

[4] BOUCHARD M, 1971, C INTERFACES GRAIN B

[5] BOUCHARD M, 152 LAWR BERK LAB RE

[6] BULK NEGATIVE-RESISTANCE SEMICONDUCTOR DEVICES [J]. IEEE SPECTRUM, 1967, 4 (05) : 71 - &

[7] Cosslett V. E., 1970, Modern diffraction and imaging techniques in material science, P341

[8] HIRSCH PB, 1969, ELECTRON MICROSCOPY, P178

[9] HIRTH JP, 1968, THEORY DISLOCATIONS, P355

[10] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 1053 - +