BULK NEGATIVE-RESISTANCE SEMICONDUCTOR DEVICES

被引：22

作者：

COPELAND, JA

机构：

来源：

IEEE SPECTRUM | 1967年 / 4卷 / 05期

关键词：

D O I：

10.1109/MSPEC.1967.5215757

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：71 / &

共 25 条

[1] MICROWAVE OSCILLATIONS IN GAASXP1-X ALLOYS (PULSED DC EXCITATION - E/T)
ALLEN, JW
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CHEN, YS
PEARSON, GL
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (04) : 78 - &
[2] RECENT RESULTS WITH EPITAXIAL GAAS GUNN EFFECT OSCILLATORS
BRADY, DP
KNIGHT, S
LAWLEY, KL
UENOHARA, M
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1497 - +
[3] A SIMPLE ANALYSIS OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT
BUTCHER, PN
FAWCETT, W
HILSUM, C
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (07): : 841 - &
[4] A NEW MODE OF OPERATION FOR BULK NEGATIVE RESISTANCE OSCILLATORS
COPELAND, JA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1479 - +
[5] LOGIC AND MEMORY ELEMENTS USING 2-VALLEY SEMICONDUCTORS
COPELAND, JA
HAYASHI, T
UENOHARA, M
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (04): : 584 - &
[6] CW OPERATION OF LSA OSCILLATOR DIODES - 44 TO 88 GHZ
COPELAND, JA
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (01): : 284 - +
[7] STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS
COPELAND, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3602 - +
[8] HIGH-PEAK-POWER GALLIUM ARSENIDE OSCILLATORS
DOW, DG
MOSHER, CH
VANE, AB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 105 - +
[9] GUNN EFFECT IN POLAR SEMICONDUCTORS
FOYT, AG
MCWHORTER, AL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 79 - +
[10] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS
GUNN, JB
[J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91

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