INTERPRETATION OF ANOMALOUS LAYERS AT GAAS N+-N- STEP JUNCTIONS

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &

[2] BLOCKER TG, TO BE PUBLISHED

[3] COPELAND JA, 1969, IEEE T ELECTRON DEVI, VED16, P445

[4] COX RH, 1970, 137 NAT M EL COS LOS

[5] COX RH, 1970, GAAS MICROWAVE OSCIL

[6] EFFECT OF NONUNIFORM CONDUCTIVITY ON BEHAVIOR OF GUNN EFFECT SAMPLES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4623 - +

[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) : 399 - +

[8] A THIN GAAS N ON N+ EPITAXIAL FILM WITH ABRUPT INTERFACE IN CARRIER CONCENTRATION PROFILE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (01) : 156 - &

[9] DIFFUSION OF HOT AND COLD ELECTRONS IN SEMICONDUCTOR BARRIERS [J]. PHYSICAL REVIEW, 1962, 126 (06): : 2002 - &

[10] WOLFE CM, 1968, ELECTROCHEM TECHNOL, V6, P208

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &

[2] BLOCKER TG, TO BE PUBLISHED

[3] COPELAND JA, 1969, IEEE T ELECTRON DEVI, VED16, P445

[4] COX RH, 1970, 137 NAT M EL COS LOS

[5] COX RH, 1970, GAAS MICROWAVE OSCIL

[6] EFFECT OF NONUNIFORM CONDUCTIVITY ON BEHAVIOR OF GUNN EFFECT SAMPLES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4623 - +

[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) : 399 - +

[8] A THIN GAAS N ON N+ EPITAXIAL FILM WITH ABRUPT INTERFACE IN CARRIER CONCENTRATION PROFILE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (01) : 156 - &

[9] DIFFUSION OF HOT AND COLD ELECTRONS IN SEMICONDUCTOR BARRIERS [J]. PHYSICAL REVIEW, 1962, 126 (06): : 2002 - &

[10] WOLFE CM, 1968, ELECTROCHEM TECHNOL, V6, P208