COMPARISON OF ELECTRICAL PROFILES FROM HOT AND COLD IMPLANTATIONS OF ZINC IONS INTO GAAS

[1] ZINC ION-IMPLANTATION INTO GAAS0.62P0.38 [J]. APPLIED PHYSICS LETTERS, 1974, 24 (07) : 320 - 322

[2] ELECTRICAL PROFILES FROM ZINC IMPLANTED GAAS [J]. ELECTRONICS LETTERS, 1978, 14 (01) : 2 - 4

[3] Littlejohn M. A., 1971, Radiation Effects, V10, P185, DOI 10.1080/00337577108230425

[4] OKABAYASHI H, 1975, ION IMPLANTATION SEM, P95

[5] NEW THIN-FILM ENCAPSULANT FOR ION-IMPLANTED GAAS [J]. THIN SOLID FILMS, 1975, 26 (02) : L19 - L22

[6] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[7] HALL-EFFECT MEASUREMENTS OF ZN IMPLANTED GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (04) : 641 - 644

[8] ZELEVINS.VM, 1974, SOV PHYS SEMICOND+, V8, P164

[1] ZINC ION-IMPLANTATION INTO GAAS0.62P0.38 [J]. APPLIED PHYSICS LETTERS, 1974, 24 (07) : 320 - 322

[2] ELECTRICAL PROFILES FROM ZINC IMPLANTED GAAS [J]. ELECTRONICS LETTERS, 1978, 14 (01) : 2 - 4

[3] Littlejohn M. A., 1971, Radiation Effects, V10, P185, DOI 10.1080/00337577108230425

[4] OKABAYASHI H, 1975, ION IMPLANTATION SEM, P95

[5] NEW THIN-FILM ENCAPSULANT FOR ION-IMPLANTED GAAS [J]. THIN SOLID FILMS, 1975, 26 (02) : L19 - L22

[6] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[7] HALL-EFFECT MEASUREMENTS OF ZN IMPLANTED GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (04) : 641 - 644

[8] ZELEVINS.VM, 1974, SOV PHYS SEMICOND+, V8, P164