CAPLESS RAPID THERMAL ANNEALING OF GAAS IMPLANTED WITH SI+ USING AN ENHANCED OVERPRESSURE PROXIMITY METHOD

被引：5

作者：

ARMIENTO, CA

LEHMAN, LL

PRINCE, FC

ZEMON, S

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8A期

关键词：

D O I：

10.1149/1.2100809

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2010 / 2016

页数：7

共 28 条

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