FORMATION OF P-TYPE GAAS-LAYERS USING MG+ IMPLANTATION AND CAPLESS RAPID THERMAL ANNEALING

被引：13

作者：

CHOUDHURY, ANMM

ARMIENTO, CA

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 26期

关键词：

D O I：

10.1063/1.97191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1787 / 1789

页数：3

共 8 条

[1] CAPLESS RAPID THERMAL ANNEALING OF GAAS USING AN ENHANCED OVERPRESSURE PROXIMITY TECHNIQUE [J].

ARMIENTO, CA ;

PRINCE, FC .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1623-1625

[2] ANNEALING OF MG IMPLANTS IN GAAS USING INCOHERENT RADIATION [J].

BLUNT, RT ;

SZWEDA, R ;

LAMB, MSM ;

CULLIS, AG .

ELECTRONICS LETTERS, 1984, 20 (11) :444-446

[3] UNIFORM P-TYPE DOPING PROFILES IN MG-24(+)-IMPLANTED, RAPIDLY ANNEALED GAAS/ALGAAS HETEROSTRUCTURES [J].

DESCOUTS, B ;

DUHAMEL, N ;

DAOUDKETATA, K ;

KRAUZ, P ;

GODEFROY, S .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :450-452

[4]

Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153

[5]

PATEL KK, 1984, APPL PHYS LETT, V48, P1467

[6] APPLICATION OF A SOLUTION PROXIMITY ANNEALING TECHNIQUE FOR FABRICATION OF ION-IMPLANTED GAAS INTEGRATED-CIRCUITS [J].

PRINCE, FC ;

ARMIENTO, CA .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :23-25

[7]

TIWARI S, 1984, I PHYS C SER, V74, P83

[8] CORRELATION OF ELECTRICAL CARRIER AND ATOMIC PROFILES OF MG IMPLANTS IN GAAS [J].

YEO, YK ;

PARK, YS ;

PEDROTTI, FL ;

CHOE, BD .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6148-6153

← 1 →