APPLICATION OF A SOLUTION PROXIMITY ANNEALING TECHNIQUE FOR FABRICATION OF ION-IMPLANTED GAAS INTEGRATED-CIRCUITS

[1] PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 64 - 65

[2] TRANSIENT CAPLESS ANNEALING OF ION-IMPLANTED GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1077 - 1082

[3] THE DEPENDENCE OF THRESHOLD VOLTAGE SCATTERING OF GAAS-MESFET ON ANNEALING METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (01): : L35 - L38

[4] THE ROLE OF DEFECTS IN THE DIFFUSION AND ACTIVATION OF IMPURITIES IN ION-IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) : 401 - 436

[5] Ishii Y., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P121

[6] CAPLESS ANNEALING OF ION-IMPLANTED GAAS IN AUTOMATICALLY EVAPORATED VAPOR [J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 554 - 556

[7] Lee R. E., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P45

[8] Mizoguchi T., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P117

[9] ORIENTATION EFFECT REDUCTION THROUGH CAPLESS ANNEALING OF SELF-ALIGNED PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 865 - 867

[10] IMPROVED THRESHOLD VOLTAGE UNIFORMITY IN GAAS-MESFET USING HIGH-PURITY MOCVD-GROWN BUFFER LAYER AS A SUBSTRATE FOR ION-IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (05): : L290 - L292

[1] PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 64 - 65

[2] TRANSIENT CAPLESS ANNEALING OF ION-IMPLANTED GAAS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1077 - 1082

[3] THE DEPENDENCE OF THRESHOLD VOLTAGE SCATTERING OF GAAS-MESFET ON ANNEALING METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (01): : L35 - L38

[4] THE ROLE OF DEFECTS IN THE DIFFUSION AND ACTIVATION OF IMPURITIES IN ION-IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) : 401 - 436

[5] Ishii Y., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P121

[6] CAPLESS ANNEALING OF ION-IMPLANTED GAAS IN AUTOMATICALLY EVAPORATED VAPOR [J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 554 - 556

[7] Lee R. E., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P45

[8] Mizoguchi T., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P117

[9] ORIENTATION EFFECT REDUCTION THROUGH CAPLESS ANNEALING OF SELF-ALIGNED PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 865 - 867

[10] IMPROVED THRESHOLD VOLTAGE UNIFORMITY IN GAAS-MESFET USING HIGH-PURITY MOCVD-GROWN BUFFER LAYER AS A SUBSTRATE FOR ION-IMPLANTATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (05): : L290 - L292