TRANSIENT CAPLESS ANNEALING OF ION-IMPLANTED GAAS

[1] BARNOSKI MK, 1974, APPL PHYS LETT, V24, P267

[2] CLARKE RC, 1983, P IEEE MICROWAVE MIL

[3] DRIVER MC, 1981, IEEE T ELECTRON DEVI, V28, P141

[4] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) : 1693 - &

[5] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 140 - 149

[6] HUNSPERGER RG, 1973, ELECTRON LETT, V9, P557

[7] THOMAS RN, 1984, SEMICONDUCTORS SEMIM

[8] ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN GAAS - DETERMINATION OF THE COMPENSATION RATIO [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 899 - 908

[9] SELF-COMPENSATION OF DONORS IN HIGH-PURITY GAAS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 564 - 567

[1] BARNOSKI MK, 1974, APPL PHYS LETT, V24, P267

[2] CLARKE RC, 1983, P IEEE MICROWAVE MIL

[3] DRIVER MC, 1981, IEEE T ELECTRON DEVI, V28, P141

[4] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) : 1693 - &

[5] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 140 - 149

[6] HUNSPERGER RG, 1973, ELECTRON LETT, V9, P557

[7] THOMAS RN, 1984, SEMICONDUCTORS SEMIM

[8] ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN GAAS - DETERMINATION OF THE COMPENSATION RATIO [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 899 - 908

[9] SELF-COMPENSATION OF DONORS IN HIGH-PURITY GAAS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 564 - 567