SELF-COMPENSATION OF DONORS IN HIGH-PURITY GAAS

被引：81

作者：

WOLFE, CM

STILLMAN, GE

机构：

[1] WASHINGTON UNIV,LAB APPL ELECTR SCI,ST LOUIS,MO 63130

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] WASHINGTON UNIV,DEPT ELECT ENGN,ST LOUIS,MO 63130

[4] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 10期

关键词：

D O I：

10.1063/1.88288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：564 / 567

页数：4

共 31 条

[1]

AKASAKI I, 1969, 9TH P INT C PHYS SEM, P787

[2] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[3]

BOLGER DE, 1967, 1966 P INT S GAAS RE, P16

[4]

CARBALLES JC, 1969, 2 P INT S GAAS I PHY, P28

[5] ANELASTICITY DUE TO INTRINSIC DEFECTS IN GAAS [J].

CHAKRAVERTY, BK ;

DREYFUS, RW .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :631-+

[6] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

DILORENZO, JV ;

MOORE, GE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1823-+

[7]

DVORYANKIN VF, 1972, SOV PHYS SEMICOND+, V5, P1636

[8] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].

EHRENREICH, H .

PHYSICAL REVIEW, 1960, 120 (06) :1951-1963

[9] OBSERVATION OF PARAMAGNETIC RESONANCE CENTERS IN GAAS IN UNUSUALLY HIGH CONCENTRATIONS [J].

GOLDSTEIN, B ;

ALMELEH, N .

APPLIED PHYSICS LETTERS, 1963, 2 (07) :130-132

[10] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J].

HARRIS, JS ;

NANNICHI, Y ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4575-&

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