ORIENTATION EFFECT REDUCTION THROUGH CAPLESS ANNEALING OF SELF-ALIGNED PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS

被引：14

作者：

SADLER, RA ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期

关键词：

D O I：

10.1063/1.94531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：865 / 867

页数：3

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[1] ORIENTATION EFFECT ON PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
LEE, CP
ZUCCA, R
WELCH, BM
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 311 - 313
[2] SELF-ALIGNED SUB-MICRON GATE DIGITAL GAAS INTEGRATED-CIRCUITS
LEVY, HM
LEE, RE
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 102 - 104
[3] A SUB-MICRON SELF-ALIGNED GAAS-MESFET TECHNOLOGY FOR DIGITAL INTEGRATED-CIRCUITS
LEVY, HM
LEE, RE
SADLER, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1687 - 1687
[4] LEVY HM, 1982, IVB3 DEV RES C PAP
[5] NAKAYAMA Y, 1983, ISSCC48 DIG TECH PAP
[6] HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS
SADLER, RA
EASTMAN, LF
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 215 - 217
[7] PROXIMATE CAPLESS ANNEALING OF GAAS USING A CONTROLLED-EXCESS AS VAPOR-PRESSURE SOURCE
WOODALL, JM
RUPPRECHT, H
CHICOTKA, RJ
WICKS, G
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 639 - 641
[8] CAPPED VERSUS CAPLESS HEAT-TREATMENT OF MOLECULAR-BEAM EPITAXIAL GAAS
XIN, SH
SCHAFF, WJ
WOOD, CEC
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 742 - 744
[9] ORIENTATION EFFECT OF SELF-ALIGNED SOURCE DRAIN PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
YOKOYAMA, N
ONODERA, H
OHNISHI, T
SHIBATOMI, A
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 270 - 271