CAPPED VERSUS CAPLESS HEAT-TREATMENT OF MOLECULAR-BEAM EPITAXIAL GAAS

被引：19

作者：

XIN, SH

SCHAFF, WJ

WOOD, CEC

EASTMAN, LF

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 08期

关键词：

D O I：

10.1063/1.93662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：742 / 744

页数：3

共 10 条

[1]

BRIONES F, UNPUB J ELECTRON MAT

[2] ELECTRON TRAPS CREATED BY HIGH-TEMPERATURE ANNEALING IN MBE N-GAAS [J].

DAY, DS ;

OBERSTAR, JD ;

DRUMMOND, TJ ;

MORKOC, H ;

CHO, AY ;

STREETMAN, BG .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) :445-453

[3] INFLUENCE OF ACTIVE-LAYER WIDTH ON PERFORMANCE OF HOMOJUNCTION AND SINGLE-HETEROJUNCTION GAAS LIGHT-EMITTING DIODES [J].

HARTH, W ;

HEINEN, J ;

HUBER, W .

ELECTRONICS LETTERS, 1975, 11 (01) :23-24

[4]

ITOH T, 1979, I PHYS C SER, V45, P26

[5] THE ANALYSIS OF EXPONENTIAL AND NON-EXPONENTIAL TRANSIENTS IN DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

KIRCHNER, PD ;

SCHAFF, WJ ;

MARACAS, GN ;

EASTMAN, LF ;

CHAPPELL, TI ;

RANSOM, CM .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6462-6470

[6]

KUNZEL H, 1981, I PHYS C SER, V56, P519

[7] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LANG, DV ;

CHO, AY ;

GOSSARD, AC ;

ILEGEMS, M ;

WIEGMANN, W .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2558-2564

[8] HIGH-QUALITY SI-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SHIMANOE, T ;

MUROTANI, T ;

NAKATANI, M ;

OTSUBO, M ;

MITSUI, S .

SURFACE SCIENCE, 1979, 86 (JUL) :126-136

[9] PROXIMATE CAPLESS ANNEALING OF GAAS USING A CONTROLLED-EXCESS AS VAPOR-PRESSURE SOURCE [J].

WOODALL, JM ;

RUPPRECHT, H ;

CHICOTKA, RJ ;

WICKS, G .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :639-641

[10] APPROXIMATELY 1.40 EV EMISSION BAND IN GAAS [J].

XIN, SH ;

WOOD, CEC ;

DESIMONE, D ;

PALMATEER, S ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1982, 18 (01) :3-5

← 1 →