PROXIMATE CAPLESS ANNEALING OF GAAS USING A CONTROLLED-EXCESS AS VAPOR-PRESSURE SOURCE

被引：32

作者：

WOODALL, JM ^{[1
]}

RUPPRECHT, H ^{[1
]}

CHICOTKA, RJ ^{[1
]}

WICKS, G ^{[1
]}

机构：

[1] CORNELL UNIV,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 08期

关键词：

D O I：

10.1063/1.92462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：639 / 641

页数：3

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共 19 条

[1] CAPLESS ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDE BY A MELT-CONTROLLED AMBIENT TECHNIQUE
ANDERSON, CL
VAIDYANATHAN, KV
DUNLAP, HL
KAMATH, GS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 925 - 927
[2] CHICOTKA RJ, 1980, 1980 IEEE 3 5 PROC T
[3] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC
DONNELLY, JP
LINDLEY, WT
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 41 - 43
[4] LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES
DONNELLY, JP
BOZLER, CO
LINDLEY, WT
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 273 - 276
[5] EASTMAN LF, 1980, P AVS S HIGH SPEED H
[6] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
GYULAI, J
MAYER, JW
MITCHELL, IV
RODRIGUEZ, V
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 332 - +
[7] HABER AM, 1979, APPL PHYS LETT, V34, P858
[8] HOBGOOD HM, 1980, 1980 IEEE 3 5 PROC T
[9] CAPLESS ANNEALING OF ION-IMPLANTED GAAS
IMMORLICA, AA
EISEN, FH
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 94 - 95
[10] CAPLESS ANNEAL OF ION-IMPLANTED GAAS IN CONTROLLED ARSENIC VAPOR
KASAHARA, J
ARAI, M
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 541 - 543