CAPLESS ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDE BY A MELT-CONTROLLED AMBIENT TECHNIQUE

被引：18

作者：

ANDERSON, CL

VAIDYANATHAN, KV

DUNLAP, HL

KAMATH, GS

机构：

来源：

关键词：

D O I：

10.1149/1.2129788

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：925 / 927

页数：3

共 19 条

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[4] DONNELLY JP, 1976, GALLIUM ARSENIDE REL
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[J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &
[7] FOYT AG, 1969, APPL PHYS LETT, V14, P73
[8] SELENIUM IMPLANTATION IN GAAS
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[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 213 - 217
[9] CAPLESS ANNEALING OF ION-IMPLANTED GAAS
IMMORLICA, AA
EISEN, FH
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 94 - 95
[10] KAMATH GS, 1976, Patent No. 3994755