IMPROVED THRESHOLD VOLTAGE UNIFORMITY IN GAAS-MESFET USING HIGH-PURITY MOCVD-GROWN BUFFER LAYER AS A SUBSTRATE FOR ION-IMPLANTATION

[1] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 853 - 855

[2] NAKAMURA H, 1983, ISSCC DIG TECH PAP I, V26, P134

[3] Yokoyama N., 1984, 1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, P44

[1] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 853 - 855

[2] NAKAMURA H, 1983, ISSCC DIG TECH PAP I, V26, P134

[3] Yokoyama N., 1984, 1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, P44