DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR

被引：128

作者：

MIYAZAWA, S

ISHII, Y

ISHIDA, S

NANISHI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期

关键词：

D O I：

10.1063/1.94526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：853 / 855

页数：3

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[1] ASAI K, 1983, ISSCC DIG TECH PAP I, V26, P46
[2] INVESTIGATION OF INHOMOGENEITIES IN GAAS BY ELECTRON-BEAM EXCITATION
CASEY, HC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 153 - +
[3] SPATIALLY RESOLVED CATHODOLUMINESCENCE STUDY OF SEMI-INSULATING GAAS SUBSTRATES
CHIN, AK
VONNEIDA, AR
CARUSO, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2386 - 2388
[4] GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS
FAIRMAN, RD
CHEN, RT
OLIVER, JR
CHEN, DR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 135 - 140
[5] PHOTOLUMINESCENCE AT DISLOCATION IN GAAS
HEINKE, W
QUEISSER, HJ
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (18) : 1082 - 1084
[6] THE INFLUENCE OF DISLOCATION DENSITY ON THE UNIFORMITY OF ELECTRICAL-PROPERTIES OF SI IMPLANTED, SEMI-INSULATING LEC-GAAS
HONDA, T
ISHII, Y
MIYAZAWA, S
YAMAZAKI, H
NANISHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (05): : L270 - L272
[7] MIYAZAWA S, 1983, JPN J APPL PHYS, V22, P419
[8] INHOMOGENEOUS GAAS-FET THRESHOLD VOLTAGES RELATED TO DISLOCATION DISTRIBUTION
NANISHI, Y
ISHIDA, S
HONDA, T
YAMAZAKI, H
MIYAZAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L335 - L337
[9] Cathodoluminescent Studies of Laser Quality GaAs
Shaw, D. A.
Thornton, P. R.
[J]. JOURNAL OF MATERIALS SCIENCE, 1968, 3 (05) : 507 - 518