THE INFLUENCE OF DISLOCATION DENSITY ON THE UNIFORMITY OF ELECTRICAL-PROPERTIES OF SI IMPLANTED, SEMI-INSULATING LEC-GAAS

被引：24

作者：

HONDA, T

ISHII, Y

MIYAZAWA, S

YAMAZAKI, H

NANISHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1983年 / 22卷 / 05期

关键词：

D O I：

10.1143/JJAP.22.L270

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L270 / L272

页数：3

共 14 条

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[10] LEAKAGE CURRENT IL VARIATION CORRELATED WITH DISLOCATION DENSITY IN UNDOPED, SEMI-INSULATING LEC-GAAS [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L542-L544

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