INHOMOGENEITY IN SEMI-INSULATING GAAS REVEALED BY SCANNING LEAKAGE CURRENT MEASUREMENTS

被引：40

作者：

MATSUMOTO, Y

WATANABE, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 08期

关键词：

D O I：

10.1143/JJAP.21.L515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L515 / L517

页数：3

共 11 条

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OLIVER, JR
CHEN, DR
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[3] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 140 - 149
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CHEN, RT
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[7] CHROMIUM AS A HOLE TRAP IN GAP AND GAAS
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SCHNEIDER, J
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 747 - 748
[8] KITAHARA K, 1982, J ELECTROCHEM SOC, V129, P881
[9] LOW-TEMPERATURE GETTERING OF CR IN GAAS
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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 53 - 55
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