CHROMIUM AS A HOLE TRAP IN GAP AND GAAS

被引：49

作者：

KAUFMANN, U

SCHNEIDER, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 09期

关键词：

D O I：

10.1063/1.91636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：747 / 748

页数：2

共 18 条

[1]

BUTLIN RS, 1977, GALLIUM ARSENIDE REL, P237

[2] DECAY OF THE DEEP-LEVEL EXTRINSIC PHOTOCONDUCTIVITY RESPONSE OF N-GAAS(CR,SI) AT LIQUID-HELIUM TEMPERATURE [J].

EAVES, L ;

WILLIAMS, PJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (18) :L725-L728

[3] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J].

HOUNG, YM ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3348-3352

[4]

KAUFMAN U, 1979, 2ND LUND INT C DEEP

[5] ESR ASSESSMENT OF 3D7 TRANSITION-METAL IMPURITY STATES IN GAP, GAAS AND INP [J].

KAUFMANN, U ;

SCHNEIDER, J .

SOLID STATE COMMUNICATIONS, 1978, 25 (12) :1113-1116

[6] ESR DETECTION OF ANTISITE LATTICE-DEFECTS IN GAP, CDSIP2, AND ZNGEP2 [J].

KAUFMANN, U ;

SCHNEIDER, J ;

RAUBER, A .

APPLIED PHYSICS LETTERS, 1976, 29 (05) :312-313

[7] ESR OF DOUBLY IONIZED CR ACCEPTOR AND INFRARED LUMINESCENCE OF CR IN GAP-CR [J].

KAUFMANN, U ;

KOSCHEL, WH .

PHYSICAL REVIEW B, 1978, 17 (05) :2081-2084

[8] DEEP TRAPS IN SEMI-INSULATING GAAS - CR REVEALED BY PHOTO-SENSITIVE ESR [J].

KAUFMANN, U ;

SCHNEIDER, J .

SOLID STATE COMMUNICATIONS, 1976, 20 (02) :143-146

[9]

KAUFMANN U, UNPUBLISHED

[10] EPR OF CR(3D3) IN GAAS - EVIDENCE FOR STRONG JAHN-TELLER EFFECTS [J].

KREBS, JJ ;

STAUSS, GH .

PHYSICAL REVIEW B, 1977, 15 (01) :17-22

← 1 2 →