DECAY OF THE DEEP-LEVEL EXTRINSIC PHOTOCONDUCTIVITY RESPONSE OF N-GAAS(CR,SI) AT LIQUID-HELIUM TEMPERATURE

被引：6

作者：

EAVES, L

WILLIAMS, PJ

机构：

[1] Department of Physics, University of Nottingham, University Park

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 18期

关键词：

D O I：

10.1088/0022-3719/12/18/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The decay of the photoconductivity of n-GaAs(Cr,Si) following photo-excitation at 4.2K is studied. Part of the decay with a lifetime of 3*103 s corresponds to electron capture at Cr2+ (3d4). A persistent photoconductivity which is quenched by warming the sample to about 100K is also observed.

引用

收藏

页码：L725 / L728

页数：4

相关论文

共 10 条

[1] ELECTRICAL COMPENSATION IN SEMI-INSULATING GALLIUM-ARSENIDE [J].

BROZEL, MR ;

BUTLER, J ;

NEWMAN, RC ;

RITSON, A ;

STIRLAND, DJ ;

WHITEHEAD, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (09) :1857-1863

[2]

CHALLIS LJ, 1979, 3RD P INT C PHON SCA

[3] DEEP CENTER PHOTO-LUMINESCENCE SPECTRA OF GAAS(CR,SI) [J].

INSTONE, T ;

EAVES, L .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (18) :L771-L775

[4]

IPPOLITOVA GK, 1975, SOV PHYS SEMICOND+, V9, P864

[5] DEEP TRAPS IN SEMI-INSULATING GAAS - CR REVEALED BY PHOTO-SENSITIVE ESR [J].

KAUFMANN, U ;

SCHNEIDER, J .

SOLID STATE COMMUNICATIONS, 1976, 20 (02) :143-146

[6] EPR OF CR2+(3D4) IN GALLIUM-ARSENIDE - JAHN-TELLER DISTORTION AND PHOTOINDUCED CHARGE CONVERSION [J].

KREBS, JJ ;

STAUSS, GH .

PHYSICAL REVIEW B, 1977, 16 (03) :971-973

[7] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

LANG, DV ;

LOGAN, RA .

PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639

[8]

Lightowlers E. C., 1979, Physics of Semiconductors 1978, P307

[9] PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS-CR [J].

LIN, AL ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :1859-1867

[10]

WHITE AF, UNPUBLISHED