DEEP CENTER PHOTO-LUMINESCENCE SPECTRA OF GAAS(CR,SI)

被引:25
作者
INSTONE, T
EAVES, L
机构
[1] Dept. of Phys., Univ. of Nottingham, Nottingham, Univ. Park
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 18期
关键词
D O I
10.1088/0022-3719/11/18/007
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The photoluminescence spectrum of GaAs(Cr, Si) is studied over a wide range of Cr and Si doping levels. The 0.84 eV line associated with an internal ( 5E to 5T2) transition of Cr2+ disappears in sufficiently n-type (Ne>or approximately= 1*1017 cm-3) material due to the conversion of all the chromium into the Cr1+ charge state.
引用
收藏
页码:L771 / L775
页数:5
相关论文
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