EFFECT OF 0.94, 1.0, 1.2, AND 1.3 EV RADIATIVE CENTERS ON INTRINSIC LUMINESCENCE INTENSITY IN N-GAAS

被引：25

作者：

GLINCHUK, KD

PROKHOROVICH, AV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 44卷 / 02期

关键词：

D O I：

10.1002/pssa.2210440248

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：777 / 785

页数：9

共 20 条

[1] LIGHT-EMITTING DIODES [J].

BERGH, AA ;

DEAN, PJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02) :156-+

[2] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].

CASEY, HC ;

SELL, DD ;

WECHT, KW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257

[3] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

CASEY, HC ;

MILLER, BI ;

PINKAS, E .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287

[4] PHOTOLUMINESCENCE STUDIES OF VACANCIES AND VACANCY-IMPURITY COMPLEXES IN ANNEALED GAAS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF LUMINESCENCE, 1975, 10 (05) :313-322

[5] INTERNAL RADIATIVE EFFICIENCY AND MECHANISM OF TEMPERATURE QUENCHING OF 1.03, 1.20, AND 1.30 EV EMISSION BANDS IN N-GAAS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV ;

VOVNENKO, VI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (02) :777-786

[6]

GLINCHUK KD, 1973, PHYS STATUS SOLIDI A, V19, pK129, DOI 10.1002/pssa.2210190250

[7] 0.94, 1.01, AND 1.29 EV LUMINESCENCE BANDS IN LASER-EXCITED N-GAAS [J].

GLINCHUK, KD ;

LINNIK, LF ;

RODIONOV, VE .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (01) :K23-K26

[8] SCHEME OF ELECTRONIC-TRANSITIONS VIA 0.94, 1.0, 1.2, AND 1.3 EV RADIATIVE CENTERS IN N-GAAS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV ;

RODIONOV, VE ;

VOVNENKO, VI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (02) :659-668

[9]

GLINCHUK KD, 1973, POLUPROVODKOVAYA TEK, V13, P16

[10]

GLINCHUK KD, 1974, FIZ TEKH POLUPROV, V8, P2295

← 1 2 →