INTERNAL RADIATIVE EFFICIENCY AND MECHANISM OF TEMPERATURE QUENCHING OF 1.03, 1.20, AND 1.30 EV EMISSION BANDS IN N-GAAS

被引:26
作者
GLINCHUK, KD [1 ]
PROKHOROVICH, AV [1 ]
VOVNENKO, VI [1 ]
机构
[1] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 34卷 / 02期
关键词
D O I
10.1002/pssa.2210340243
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:777 / 786
页数:10
相关论文
共 14 条
[1]  
BATAVIN VV, 1972, FIZ TEKH POLUPROV, V6, P1874
[2]  
BATAVIN VV, 1973, FTP, V7, P1790
[3]   CHARACTERISTICS OF COPPER-INDUCED 1.35 EV EMISSION BAND IN P-GAAS [J].
GLINCHUK, KD ;
PROKHOROVICH, AV .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01) :339-345
[4]   TEMPERATURE QUENCHING OF 1.28 TO 1.30 EV-EMISSION BAND IN GAAS [J].
GLINCHUK, KD ;
PROKHOROVICH, AV .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 23 (01) :K77-K81
[5]  
HERBST HJ, 1973, PROBLEME FESTKORPERE, V5, P7
[6]  
Landsberg P. T., 1973, Journal of Luminescence, V7, P3, DOI 10.1016/0022-2313(73)90057-4
[7]   THEORY OF DONOR-ACCEPTOR RADIATIVE AND AUGER RECOMBINATION IN SIMPLE SEMICONDUCTORS [J].
LANDSBERG, PT ;
ADAMS, MJ .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 334 (1599) :523-539
[8]  
SUGUJAMA K, 1967, JAPAN J APPL PHYS, V6, P601
[9]  
VANDERDOESDEBYE JA, 1967, J PHYS CHEM SOLIDS, V28, P1485
[10]   QUANTUM EFFICIENCY AND RADIATIVE LIFETIME IN P-TYPE GALLIUM ARSENIDE [J].
VILMS, J ;
SPICER, WE .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2815-&