CHARACTERISTICS OF COPPER-INDUCED 1.35 EV EMISSION BAND IN P-GAAS

被引：22

作者：

GLINCHUK, KD ^{[1
]}

PROKHOROVICH, AV ^{[1
]}

机构：

[1] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 29卷 / 01期

关键词：

D O I：

10.1002/pssa.2210290138

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：339 / 345

页数：7

共 9 条

[1] TEMPERATURE QUENCHING OF 1.28 TO 1.30 EV-EMISSION BAND IN GAAS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 23 (01) :K77-K81

[2] 0.94, 1.01, AND 1.29 EV LUMINESCENCE BANDS IN LASER-EXCITED N-GAAS [J].

GLINCHUK, KD ;

LINNIK, LF ;

RODIONOV, VE .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (01) :K23-K26

[3] TEMPERATURE QUENCHING OF COPPER-INDUCED 1.35 EV EMISSION BAND IN P-GAAS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 25 (01) :323-327

[4]

VANDERDOESDEBYE JA, 1967, J PHYS CHEM SOLIDS, V28, P1485

[5] EFFECT OF HEAT-TREATMENT ON 0.93, 1.0, AND 1.28 EV LUMINESCENCE BANDS IN N-GAAS [J].

VOROBKAL.FM ;

GLINCHUK, KD ;

PROKHORO.AV ;

JOHN, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (01) :287-293

[6] CHARACTERISTICS OF 0.93 TO 1.0 EV LUMINESCENCE BANDS IN GAAS [J].

VOROBKALO, FM ;

GLINCHUK, KD ;

PROKHOROVICH, AV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (01) :135-+

[7]

Williams E.W., 1992, SEMICONDUCTOR SEMIME, V8, P321

[8] DONOR-ACCEPTOR PAIRS IN SEMICONDUCTORS [J].

WILLIAMS, F .

PHYSICA STATUS SOLIDI, 1968, 25 (02) :493-&

[9]

Williams F., 1973, Journal of Luminescence, V7, P35, DOI 10.1016/0022-2313(73)90058-6

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