EFFECT OF HEAT-TREATMENT ON 0.93, 1.0, AND 1.28 EV LUMINESCENCE BANDS IN N-GAAS

被引：38

作者：

VOROBKAL.FM ^{[1
]}

GLINCHUK, KD ^{[1
]}

PROKHORO.AV ^{[1
]}

JOHN, G ^{[1
]}

机构：

[1] ACAD SCI UKSSR,INST SEMICOND,KIEV,UKSSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 15卷 / 01期

关键词：

D O I：

10.1002/pssa.2210150132

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：287 / 293

页数：7

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[10] RECOMBINATION AND TRAPPING PROCESSES AT DEEP CENTERS IN N-TYPE GAAS [J].

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