TEMPERATURE QUENCHING OF COPPER-INDUCED 1.35 EV EMISSION BAND IN P-GAAS

被引：8

作者：

GLINCHUK, KD ^{[1
]}

PROKHOROVICH, AV ^{[1
]}

机构：

[1] ACAD SCI UKSSR, SEMICOND INST, KIEV, UKSSR

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 25卷 / 01期

关键词：

D O I：

10.1002/pssa.2210250131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：323 / 327

页数：5

共 9 条

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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (01) :53-62

[2] TEMPERATURE QUENCHING OF 1.28 TO 1.30 EV-EMISSION BAND IN GAAS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 23 (01) :K77-K81

[3] MECHANISM OF TEMPERATURE QUENCHING OF COPPER-INDUCED 1.35 EV LUMINESCE AND BAND IN GAAS [J].

GLINCHUK, KD ;

PROKHOROVICH, AV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 5 (03) :K195-+

[4]

GLINCHUK KD, 1973, POLUPROVODKOVAYA TEK, V13, P16

[5] STATISTICS OF INTER-IMPURITY RECOMBINATION OF ELECTRONS AND HOLES IN SEMICONDUCTORS [J].

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PHYSICA STATUS SOLIDI, 1968, 26 (02) :419-&

[6] ON MECHANISM OF HIGH-TEMPERATURE QUENCHING OF COPPER-INDUCED LUMINESCENCE IN P-TYPE GAAS [J].

METTLER, K .

SOLID STATE COMMUNICATIONS, 1969, 7 (23) :1713-&

[7] EFFECT OF HEAT-TREATMENT ON 0.93, 1.0, AND 1.28 EV LUMINESCENCE BANDS IN N-GAAS [J].

VOROBKAL.FM ;

GLINCHUK, KD ;

PROKHORO.AV ;

JOHN, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (01) :287-293

[8] EFFECT OF HEAT-TREATMENT ON 0.93 EV LUMINESCENCE BAND IN PARA GAAS [J].

VOROBKALO, FM ;

PROKHOROVICH, AV ;

GLINCHUK, KD .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 10 (02) :651-+

[9]

Williams E. W., 1992, SEMICONDUCT SEMIMET, V8, P321

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