ON MECHANISM OF HIGH-TEMPERATURE QUENCHING OF COPPER-INDUCED LUMINESCENCE IN P-TYPE GAAS

被引：4

作者：

METTLER, K

机构：

[1] Forschungslaboratorium der Siemens AG, München

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 23期

关键词：

D O I：

10.1016/0038-1098(69)90138-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The measured 1.35 eV copper acceptor luminescence is quenched at lower temperatures than would be expected from the decrease of neutral recombination centers. Recombination kinetics show that the quenching is caused by thermal emission of holes from the acceptors into the valence band and that the ionized Cu acceptor is singly charged. © 1969.

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页码：1713 / &

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