0.94, 1.01, AND 1.29 EV LUMINESCENCE BANDS IN LASER-EXCITED N-GAAS

被引：10

作者：

GLINCHUK, KD ^{[1
]}

LINNIK, LF ^{[1
]}

RODIONOV, VE ^{[1
]}

机构：

[1] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 18卷 / 01期

关键词：

D O I：

10.1002/pssa.2210180148

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K23 / K26

页数：4

共 8 条

[1]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2]

GLINCHUK KD, 1973, POLUPROVODNIKOVAYA T, V13

[3] PHOTOLUMINESCENT SATURATION IN GAP (ZN, O) [J].

JAYSON, JS .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3854-&

[4] STATISTICS OF INTER-IMPURITY RECOMBINATION OF ELECTRONS AND HOLES IN SEMICONDUCTORS [J].

KARAGEOG.PM ;

LEIDERMA.AY .

PHYSICA STATUS SOLIDI, 1968, 26 (02) :419-&

[5]

MILLEA MF, 1966, PHYS REV, V148, P759

[6] KINETICS OF RED LUMINESCENCE IN GAP [J].

ROSENZWEIG, W ;

HACKETT, WH ;

JAYSON, JS .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4477-+

[7] EFFECT OF HEAT-TREATMENT ON 0.93, 1.0, AND 1.28 EV LUMINESCENCE BANDS IN N-GAAS [J].

VOROBKAL.FM ;

GLINCHUK, KD ;

PROKHORO.AV ;

JOHN, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (01) :287-293

[8] CHARACTERISTICS OF 0.93 TO 1.0 EV LUMINESCENCE BANDS IN GAAS [J].

VOROBKALO, FM ;

GLINCHUK, KD ;

PROKHOROVICH, AV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (01) :135-+

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