PHOTOLUMINESCENCE STUDIES OF VACANCIES AND VACANCY-IMPURITY COMPLEXES IN ANNEALED GAAS

被引：65

作者：

CHIANG, SY ^{[1
]}

PEARSON, GL ^{[1
]}

机构：

[1] STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF LUMINESCENCE | 1975年 / 10卷 / 05期

关键词：

D O I：

10.1016/0022-2313(75)90054-X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：313 / 322

页数：10

共 12 条

[1] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
CHIANG, SY
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991
[2] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
RACETTE, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &
[3] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A): : A866 - &
[4] OPTICAL PROPERTIES OF N-TYPE GAAS .2. FORMATION OF EFFICIENT HOLE TRAPS DURING ANNEALING IN TE-DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4584 - &
[5] OPTICAL PROPERTIES OF N-TYPE GAAS .3. RELATIVE BAND-EDGE RECOMBINATION EFFICIENCY OF SI- AND TE-DOPED CRYSTALS BEFORE AND AFTER HEAT TREATMENT
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4591 - &
[6] EVIDENCE FOR LUMINESCENCE INVOLVING ARSENIC VACANCY-ACCEPTOR CENTERS IN P-TYPE GAAS
HWANG, CJ
[J]. PHYSICAL REVIEW, 1969, 180 (03): : 827 - &
[7] EFFECT OF HEAT TREATMENT ON 1.370 EV PHOTOLUMINESCENCE EMISSION BAND IN ZN-DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4307 - &
[8] NEW DEEP-LEVEL LUMINESCENCE IN GAAS - SN
KRESSEL, H
NELSON, H
HAWRYLO, FZ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5647 - &
[9] PHOTOLUMINESCENCE OF DONOR DOPED GAAS DIFFUSED WITH COPPER
NAKASHIMA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (12) : 1737 - +
[10] PHOTOLUMINESCENCE OF CU-DOPED GALLIUM ARSENIDE
QUEISSER, HJ
FULLER, CS
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4895 - &

← 1 2 →