PHOTOLUMINESCENCE OF DONOR DOPED GAAS DIFFUSED WITH COPPER

被引:15
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NAKASHIMA, H
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10.1143/JJAP.10.1737
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O59 [应用物理学];
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页码:1737 / +
页数:1
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[1]   DEFECT CENTERS IN GAAS PRODUCED BY CU DIFFUSION [J].
FULLER, CS ;
WOLFSTIR.KB ;
ALLISON, HW .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) :4339-&
[2]   PHOTOLUMINESCENCE STUDY OF INTERFACE BETWEEN GAAS EPITAXIAL LAYER AND ITS SUBSTRATE [J].
NAKASHIMA, H ;
HIRAO, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (12) :1495-+
[3]  
NAKASHIMA H, 1970, 2 P C SOL STAT DEV T, P53
[4]   PHOTOLUMINESCENCE OF CU-DOPED GALLIUM ARSENIDE [J].
QUEISSER, HJ ;
FULLER, CS .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) :4895-&
[5]   A PHOTOLUMINESCENCE STUDY OF ACCEPTOR CENTRES IN GALLIUM ARSENIDE [J].
WILLIAMS, EW .
BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (03) :253-&
[6]   EVIDENCE FOR SELF-ACTIVATED LUMINESCENCE IN GAAS - GALLIUM VACANCY-DONOR CENTER [J].
WILLIAMS, EW .
PHYSICAL REVIEW, 1968, 168 (03) :922-&