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DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES

被引：52
作者：
HOUNG, YM [1 ]
PEARSON, GL [1 ]
机构：
[1] STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
来源：
JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 06期
关键词：
D O I：
10.1063/1.325290
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3348 / 3352
页数：5
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