ROLE OF DISLOCATIONS IN SEMI-INSULATION MECHANISM IN UNDOPED LEC GAAS CRYSTAL

被引：48

作者：

KAMEJIMA, T

SHIMURA, F

MATSUMOTO, Y

WATANABE, H

MATSUI, J

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 11期

关键词：

D O I：

10.1143/JJAP.21.L721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L721 / L723

页数：3

共 10 条

[1] Clark S., 1981, Microscopy of Semiconducting Materials, 1981. Proceedings of the 2nd Oxford Conference, P339
[2] GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS
FAIRMAN, RD
CHEN, RT
OLIVER, JR
CHEN, DR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 135 - 140
[3] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
HOLMES, DE
CHEN, RT
ELLIOTT, KR
KIRKPATRICK, CG
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 46 - 48
[4] HOLT PB, 1974, QUANTITATIVE SCANNIN, P361
[5] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS
JORDAN, AS
CARUSO, R
VONNEIDA, AR
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04): : 593 - 637
[6] KITAHARA K, 1982, J ELECTROCHEM SOC, V129, P881
[7] COMPENSATION MECHANISMS IN GAAS
MARTIN, GM
FARGES, JP
JACOB, G
HALLAIS, JP
POIBLAUD, G
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2840 - 2852
[8] INHOMOGENEITY IN SEMI-INSULATING GAAS REVEALED BY SCANNING LEAKAGE CURRENT MEASUREMENTS
MATSUMOTO, Y
WATANABE, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L515 - L517
[9] Cathodoluminescent Studies of Laser Quality GaAs
Shaw, D. A.
Thornton, P. R.
[J]. JOURNAL OF MATERIALS SCIENCE, 1968, 3 (05) : 507 - 518
[10] CHARACTERIZATION OF NONUNIFORMITY IN SEMI-INSULATING LEC GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY
TAJIMA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04): : L227 - L229