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INVESTIGATION OF INHOMOGENEITIES IN GAAS BY ELECTRON-BEAM EXCITATION
被引:75
作者
:
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
CASEY, HC
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1967年
/ 114卷
/ 2P1期
关键词
:
D O I
:
10.1149/1.2426528
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:153 / +
页数:1
相关论文
共 32 条
[1]
ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
[J].
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
;
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(09)
:2855
-&
[2]
ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB
[J].
BURSTEIN, E
论文数:
0
引用数:
0
h-index:
0
BURSTEIN, E
.
PHYSICAL REVIEW,
1954,
93
(03)
:632
-633
[3]
ANALYSIS OF N-TYPE GAAS WITH ELECTRON-BEAM-EXCITED RADIATIVE RECOMBINATION
[J].
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
CASEY, HC
;
KAISER, RH
论文数:
0
引用数:
0
h-index:
0
KAISER, RH
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(2P1)
:149
-+
[4]
CASEY HC, 1965, B AM PHYS SOC, V10, P1199
[5]
ANNULAR FACETS AND IMPURITY STRIATIONS IN TELLURIUM-DOPED GALLIUM ARSENIDE
[J].
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
;
LARRABEE, GB
论文数:
0
引用数:
0
h-index:
0
LARRABEE, GB
;
OSBORNE, JF
论文数:
0
引用数:
0
h-index:
0
OSBORNE, JF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(03)
:292
-&
[6]
RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
[J].
CUSANO, DA
论文数:
0
引用数:
0
h-index:
0
CUSANO, DA
.
SOLID STATE COMMUNICATIONS,
1964,
2
(11)
:353
-358
[7]
CROSS-SECTIONAL RESISTIVITY VARIATIONS IN GERMANIUM SINGLE CRYSTALS
[J].
DIKHOFF, JAM
论文数:
0
引用数:
0
h-index:
0
DIKHOFF, JAM
.
SOLID-STATE ELECTRONICS,
1960,
1
(03)
:202
-&
[8]
OPTICAL INHOMOGENEITIES IN GALLIUM ARSENIDE
[J].
DROUGARD, ME
论文数:
0
引用数:
0
h-index:
0
DROUGARD, ME
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(04)
:1858
-&
[9]
THE DIFFUSION OF TIN AND SELENIUM IN GALLIUM ARSENIDE
[J].
FANE, RW
论文数:
0
引用数:
0
h-index:
0
FANE, RW
;
GOSS, AJ
论文数:
0
引用数:
0
h-index:
0
GOSS, AJ
.
SOLID-STATE ELECTRONICS,
1963,
6
(04)
:383
-387
[10]
LIGHT EMISSION ASSOCIATED WITH GROWTH DEFECTS FROM REVERSE-BIASED GAP P-N JUNCTIONS
[J].
GERSHENZON, M
论文数:
0
引用数:
0
h-index:
0
GERSHENZON, M
;
ASHKIN, A
论文数:
0
引用数:
0
h-index:
0
ASHKIN, A
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(01)
:246
-+
←
1
2
3
4
→
共 32 条
[1]
ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
[J].
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
;
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(09)
:2855
-&
[2]
ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB
[J].
BURSTEIN, E
论文数:
0
引用数:
0
h-index:
0
BURSTEIN, E
.
PHYSICAL REVIEW,
1954,
93
(03)
:632
-633
[3]
ANALYSIS OF N-TYPE GAAS WITH ELECTRON-BEAM-EXCITED RADIATIVE RECOMBINATION
[J].
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
CASEY, HC
;
KAISER, RH
论文数:
0
引用数:
0
h-index:
0
KAISER, RH
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(2P1)
:149
-+
[4]
CASEY HC, 1965, B AM PHYS SOC, V10, P1199
[5]
ANNULAR FACETS AND IMPURITY STRIATIONS IN TELLURIUM-DOPED GALLIUM ARSENIDE
[J].
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
;
LARRABEE, GB
论文数:
0
引用数:
0
h-index:
0
LARRABEE, GB
;
OSBORNE, JF
论文数:
0
引用数:
0
h-index:
0
OSBORNE, JF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(03)
:292
-&
[6]
RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
[J].
CUSANO, DA
论文数:
0
引用数:
0
h-index:
0
CUSANO, DA
.
SOLID STATE COMMUNICATIONS,
1964,
2
(11)
:353
-358
[7]
CROSS-SECTIONAL RESISTIVITY VARIATIONS IN GERMANIUM SINGLE CRYSTALS
[J].
DIKHOFF, JAM
论文数:
0
引用数:
0
h-index:
0
DIKHOFF, JAM
.
SOLID-STATE ELECTRONICS,
1960,
1
(03)
:202
-&
[8]
OPTICAL INHOMOGENEITIES IN GALLIUM ARSENIDE
[J].
DROUGARD, ME
论文数:
0
引用数:
0
h-index:
0
DROUGARD, ME
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(04)
:1858
-&
[9]
THE DIFFUSION OF TIN AND SELENIUM IN GALLIUM ARSENIDE
[J].
FANE, RW
论文数:
0
引用数:
0
h-index:
0
FANE, RW
;
GOSS, AJ
论文数:
0
引用数:
0
h-index:
0
GOSS, AJ
.
SOLID-STATE ELECTRONICS,
1963,
6
(04)
:383
-387
[10]
LIGHT EMISSION ASSOCIATED WITH GROWTH DEFECTS FROM REVERSE-BIASED GAP P-N JUNCTIONS
[J].
GERSHENZON, M
论文数:
0
引用数:
0
h-index:
0
GERSHENZON, M
;
ASHKIN, A
论文数:
0
引用数:
0
h-index:
0
ASHKIN, A
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(01)
:246
-+
←
1
2
3
4
→