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THE ROLE OF DEFECTS IN THE DIFFUSION AND ACTIVATION OF IMPURITIES IN ION-IMPLANTED SEMICONDUCTORS

被引：22
作者：
FARLEY, CW
STREETMAN, BG
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 02期
关键词：
D O I：
10.1007/BF02656686
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：401 / 436
页数：36
相关论文
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