APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：30

作者：

ASBECK, PM

MILLER, DL

BABCOCK, EJ

KIRKPATRICK, CG

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 04期

关键词：

D O I：

10.1109/EDL.1983.25656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：81 / 84

页数：4

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