TRANSIENT ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE USING A GRAPHITE STRIP HEATER

[1] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 41 - 43

[2] THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED COMPOUND SEMICONDUCTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 553 - 571

[3] DONNELLY JP, 1977, I PHYS C SER B, V33, P166

[4] Fan J. C. C., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P261

[5] CAPLESS ANNEAL OF ION-IMPLANTED GAAS IN CONTROLLED ARSENIC VAPOR [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 541 - 543

[6] MULTILAYERED ENCAPSULATION OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) : 5213 - 5217

[7] FAST DIFFUSION OF ELEVATED-TEMPERATURE ION-IMPLANTED SE IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 149 - 151

[8] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 158 - 161

[9] SOLID SOLUBILITY OF SELENIUM IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 572 - 573

[10] SEALY BJ, 1979, I PHYS C SER, V46, P476

[1] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 41 - 43

[2] THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED COMPOUND SEMICONDUCTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 553 - 571

[3] DONNELLY JP, 1977, I PHYS C SER B, V33, P166

[4] Fan J. C. C., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P261

[5] CAPLESS ANNEAL OF ION-IMPLANTED GAAS IN CONTROLLED ARSENIC VAPOR [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 541 - 543

[6] MULTILAYERED ENCAPSULATION OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) : 5213 - 5217

[7] FAST DIFFUSION OF ELEVATED-TEMPERATURE ION-IMPLANTED SE IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 149 - 151

[8] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 158 - 161

[9] SOLID SOLUBILITY OF SELENIUM IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 572 - 573

[10] SEALY BJ, 1979, I PHYS C SER, V46, P476