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THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED COMPOUND SEMICONDUCTORS
被引:106
作者
:
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
DONNELLY, JP
机构
:
来源
:
NUCLEAR INSTRUMENTS & METHODS
|
1981年
/ 182卷
/ APR期
关键词
:
D O I
:
10.1016/0029-554X(81)90777-1
中图分类号
:
TH7 [仪器、仪表];
学科分类号
:
0804 ;
080401 ;
081102 ;
摘要
:
引用
收藏
页码:553 / 571
页数:19
相关论文
共 213 条
[1]
ADACHI S, 1976, JPN J APPL PHYS, V15, P1513, DOI 10.1143/JJAP.15.1513
[2]
AKIMCHENKO IP, 1975, SOV PHYS SEMICOND+, V9, P19
[3]
EFFECT OF DUAL IMPLANTS INTO GAAS
AMBRIDGE, T
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
AMBRIDGE, T
HECKINGBOTTOM, R
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
HECKINGBOTTOM, R
BELL, EC
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
BELL, EC
SEALY, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
SEALY, BJ
STEPHENS, KG
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
STEPHENS, KG
SURRIDGE, RK
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
SURRIDGE, RK
[J].
ELECTRONICS LETTERS,
1975,
11
(15)
: 314
-
315
[4]
LOW-TEMPERATURE ANNEALING BEHAVIOR OF GAAS IMPLANTED WITH BE
ANDERSON, CL
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu
ANDERSON, CL
DUNLAP, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu
DUNLAP, HL
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(02)
: 178
-
180
[5]
CAPLESS ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDE BY A MELT-CONTROLLED AMBIENT TECHNIQUE
ANDERSON, CL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, CL
VAIDYANATHAN, KV
论文数:
0
引用数:
0
h-index:
0
VAIDYANATHAN, KV
DUNLAP, HL
论文数:
0
引用数:
0
h-index:
0
DUNLAP, HL
KAMATH, GS
论文数:
0
引用数:
0
h-index:
0
KAMATH, GS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(04)
: 925
-
927
[6]
PHOSPHOROUS-ION-IMPLANTED CDS
ANDERSON, WW
论文数:
0
引用数:
0
h-index:
0
ANDERSON, WW
MITCHELL, JT
论文数:
0
引用数:
0
h-index:
0
MITCHELL, JT
[J].
APPLIED PHYSICS LETTERS,
1968,
12
(10)
: 334
-
&
[7]
AOKI K, 1977, ION IMPLANTATION SEM, P123
[8]
ARKADEVA EN, 1975, SOV PHYS SEMICOND+, V9, P563
[9]
P-N-JUNCTION DIODES IN INP AND IN1-XGAXASYP1-Y FABRICATED BY BERYLLIUM-ION IMPLANTATION
ARMIENTO, CA
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
ARMIENTO, CA
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
DONNELLY, JP
GROVES, SH
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
GROVES, SH
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(03)
: 229
-
231
[10]
RADIATION-ENHANCED DIFFUSION OF ION-IMPLANTED BISMUTH IN CADMIUM-SULFIDE
ARMITAGE, SA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT ENGN SCI,PARKS RD,OXFORD OX1 3PJ,ENGLAND
UNIV OXFORD,DEPT ENGN SCI,PARKS RD,OXFORD OX1 3PJ,ENGLAND
ARMITAGE, SA
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1975,
8
(17)
: 2034
-
2042
←
1
2
3
4
5
6
7
8
9
10
→
共 213 条
[1]
ADACHI S, 1976, JPN J APPL PHYS, V15, P1513, DOI 10.1143/JJAP.15.1513
[2]
AKIMCHENKO IP, 1975, SOV PHYS SEMICOND+, V9, P19
[3]
EFFECT OF DUAL IMPLANTS INTO GAAS
AMBRIDGE, T
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
AMBRIDGE, T
HECKINGBOTTOM, R
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
HECKINGBOTTOM, R
BELL, EC
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
BELL, EC
SEALY, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
SEALY, BJ
STEPHENS, KG
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
STEPHENS, KG
SURRIDGE, RK
论文数:
0
引用数:
0
h-index:
0
机构:
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND
SURRIDGE, RK
[J].
ELECTRONICS LETTERS,
1975,
11
(15)
: 314
-
315
[4]
LOW-TEMPERATURE ANNEALING BEHAVIOR OF GAAS IMPLANTED WITH BE
ANDERSON, CL
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu
ANDERSON, CL
DUNLAP, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu
DUNLAP, HL
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(02)
: 178
-
180
[5]
CAPLESS ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDE BY A MELT-CONTROLLED AMBIENT TECHNIQUE
ANDERSON, CL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, CL
VAIDYANATHAN, KV
论文数:
0
引用数:
0
h-index:
0
VAIDYANATHAN, KV
DUNLAP, HL
论文数:
0
引用数:
0
h-index:
0
DUNLAP, HL
KAMATH, GS
论文数:
0
引用数:
0
h-index:
0
KAMATH, GS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(04)
: 925
-
927
[6]
PHOSPHOROUS-ION-IMPLANTED CDS
ANDERSON, WW
论文数:
0
引用数:
0
h-index:
0
ANDERSON, WW
MITCHELL, JT
论文数:
0
引用数:
0
h-index:
0
MITCHELL, JT
[J].
APPLIED PHYSICS LETTERS,
1968,
12
(10)
: 334
-
&
[7]
AOKI K, 1977, ION IMPLANTATION SEM, P123
[8]
ARKADEVA EN, 1975, SOV PHYS SEMICOND+, V9, P563
[9]
P-N-JUNCTION DIODES IN INP AND IN1-XGAXASYP1-Y FABRICATED BY BERYLLIUM-ION IMPLANTATION
ARMIENTO, CA
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
ARMIENTO, CA
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
DONNELLY, JP
GROVES, SH
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
GROVES, SH
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(03)
: 229
-
231
[10]
RADIATION-ENHANCED DIFFUSION OF ION-IMPLANTED BISMUTH IN CADMIUM-SULFIDE
ARMITAGE, SA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OXFORD,DEPT ENGN SCI,PARKS RD,OXFORD OX1 3PJ,ENGLAND
UNIV OXFORD,DEPT ENGN SCI,PARKS RD,OXFORD OX1 3PJ,ENGLAND
ARMITAGE, SA
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1975,
8
(17)
: 2034
-
2042
←
1
2
3
4
5
6
7
8
9
10
→