P-N-JUNCTION DIODES IN INP AND IN1-XGAXASYP1-Y FABRICATED BY BERYLLIUM-ION IMPLANTATION

被引：20

作者：

ARMIENTO, CA

DONNELLY, JP

GROVES, SH

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 03期

关键词：

D O I：

10.1063/1.90740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mesa and planar InP p-n junction diodes have been fabricated by beryllium-ion implantation. These devices exhibit abrupt reverse-bias breakdowns and low leakage currents. Similar mesa diodes have been produced in In 1-xGaxAsyP1-y (Eg≈1.0 eV). Diodes operated in the punch-through mode exhibited uniform breakdown over the area of the device, without any apparent edge effects.

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页码：229 / 231

页数：3

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