EFFECT OF DUAL IMPLANTS INTO GAAS

被引：20

作者：

AMBRIDGE, T ^{[1
]}

HECKINGBOTTOM, R ^{[1
]}

BELL, EC ^{[1
]}

SEALY, BJ ^{[1
]}

STEPHENS, KG ^{[1
]}

SURRIDGE, RK ^{[1
]}

机构：

[1] POST OFF RES DEPT,DOLLIS HILL,LONDON,ENGLAND

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 15期

关键词：

D O I：

10.1049/el:19750241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：314 / 315

页数：2

共 9 条

[1]

AMBRIDGE T, 1973, RADIAT EFF, V17, P31

[2]

BELL EG, TO BE PUBLISHED

[3]

EISEN FH, 1972, C ION IMPLANTATION S

[4] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J].

FOYT, AG ;

DONNELLY, JP ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1969, 14 (12) :372-&

[5] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

HARRIS, JS ;

MAYER, JW ;

EISEN, FH ;

HASKELL, JD ;

WELCH, B ;

PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[6] OPTICAL PROPERTIES OF N-TYPE GAAS .2. FORMATION OF EFFICIENT HOLE TRAPS DURING ANNEALING IN TE-DOPED GAAS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4584-&

[7]

MULLER H, 1974, P C ION IMPLANTATION

[8] NEW THIN-FILM ENCAPSULANT FOR ION-IMPLANTED GAAS [J].

SEALY, BJ ;

SURRIDGE, RK .

THIN SOLID FILMS, 1975, 26 (02) :L19-L22

[9] ELECTRICAL AND CATHODOLUMINESCENCE MEASUREMENTS ON ION-IMPLANTED DONOR LAYERS IN GAAS [J].

WOODCOCK, JM ;

SHANNON, JM ;

CLARK, DJ .

SOLID-STATE ELECTRONICS, 1975, 18 (03) :267-275

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