ELECTRICAL AND CATHODOLUMINESCENCE MEASUREMENTS ON ION-IMPLANTED DONOR LAYERS IN GAAS

被引：43

作者：

WOODCOCK, JM ^{[1
]}

SHANNON, JM ^{[1
]}

CLARK, DJ ^{[1
]}

机构：

[1] MULLARD RES LABS,REDHILL,SURREY,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 03期

关键词：

D O I：

10.1016/0038-1101(75)90059-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：267 / 275

页数：9

共 28 条

[1] LUMINESCENCE IN INTRINSIC AND ANNEALED ELECTRON-IRRADIATED GAAS - CD [J].

ARNOLD, GW .

PHYSICAL REVIEW, 1969, 183 (03) :777-&

[2] ANNEALING OF ELECTRON-IRRADIATED GAAS [J].

AUKERMAN, LW ;

GRAFT, RD .

PHYSICAL REVIEW, 1962, 127 (05) :1576-&

[3] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS [J].

BOGARDUS, EH ;

BEBB, HB .

PHYSICAL REVIEW, 1968, 176 (03) :993-&

[4]

BRICE DK, 1971, SCRR710599 SAND LABS

[5] EVALUATION OF ARCHARD ELECTRON DIFFUSION MODEL [J].

BROWN, DB ;

OGILVIE, RE .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) :2793-&

[6]

Carter G., 1970, Radiation Effects, V6, P277, DOI 10.1080/00337577008236307

[7]

EISEN FH, 1973, 1973 P C ION IMPL SE, P631

[8] THE DIFFUSION OF TIN AND SELENIUM IN GALLIUM ARSENIDE [J].

FANE, RW ;

GOSS, AJ .

SOLID-STATE ELECTRONICS, 1963, 6 (04) :383-387

[9] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J].

FOYT, AG ;

DONNELLY, JP ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1969, 14 (12) :372-&

[10] DIFFUSION IN COMPOUND SEMICONDUCTORS [J].

GOLDSTEIN, B .

PHYSICAL REVIEW, 1961, 121 (05) :1305-&

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